? semiconductor components industries, llc, 2007 april, 2007 -- rev. 6 1 publication order number: p2n2907a/d p2n2907a amplifier transistor pnp silicon features ? these are pb--free devices* maximum ratings rating symbol value unit collector--emitter voltage v ceo -- 6 0 vdc collector--base voltage v cbo -- 6 0 vdc emitter--base voltage v ebo -- 5 . 0 vdc collector current -- continuous i c --600 madc total device dissipation @ t a =25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c =25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j ,t stg -- 5 5 t o +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. f unctional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com p2n2907arl1g to--92 (pb--free) 5000 units / bulk device package shipping ? P2N2907AG to--92 (pb--free) ordering information collector 1 2 base 3 emitter ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 2000 / tape & reel 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk pack 3 to--92 case 29 style 17 marking diagram p2n2 907a ayww g g a = assembly location y = year ww = work week g = pb--free package (note: microdot may be in either location)
p2n2907a http://onsemi.com 2 electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector--emitter breakdown voltage (note 1) (i c =--10madc,i b =0) v (br)ceo -- 6 0 -- vdc collector--base breakdown voltage (i c =--10 m adc, i e =0) v (br)cbo -- 6 0 -- vdc emitter--base breakdown voltage (i e =--10 m adc, i c =0) v (br)ebo -- 5 . 0 -- vdc collector cutoff current (v ce =--30vdc,v eb(off) =--0.5vdc) i cex -- -- 5 0 nadc collector cutoff current (v cb =--50vdc,i e =0) (v cb =--50vdc,i e =0,t a = 150 c) i cbo -- -- --0.01 -- 1 0 m adc emitter cutoff current (v eb =--3.0vdc) i ebo -- -- 1 0 nadc collector cutoff current (v ce =--10v) i ceo -- -- 1 0 nadc base cutoff current (v ce =--30vdc,v eb(off) =--0.5vdc) i bex -- -- 5 0 nadc on characteristics dc current gain (i c =--0.1madc,v ce =--10vdc) (i c =--1.0madc,v ce =--10vdc) (i c =--10madc,v ce =--10vdc) (i c = --150 madc, v ce = --10 vdc) (note 1) (i c = --500 madc, v ce = --10 vdc) (note 1) h fe 75 100 100 100 50 -- -- -- 300 -- -- collector--emitter saturation voltage (note 1) (i c = --150 madc, i b =--15madc) (i c = --500 madc, i b =--50madc) v ce(sat) -- -- -- 0 . 4 -- 1 . 6 vdc base--emitter saturation voltage (note 1) (i c = --150 madc, i b =--15madc) (i c = --500 madc, i b =--50madc) v be(sat) -- -- -- 1 . 3 -- 2 . 6 vdc small--signal characteristics current--gain -- bandwidth product (notes 1 and 2) (i c =--50madc,v ce = --20 vdc, f = 100 mhz) f t 200 -- mhz output capacitance (v cb =--10vdc,i e =0,f=1.0mhz) c obo -- 8.0 pf input capacitance (v eb =--2.0vdc,i c =0,f=1.0mhz) c ibo -- 30 pf switching characteristics turn--on time (v cc =--30vdc,i c = --150 madc, i b1 = --15 madc) (figures 1 and 5) t on -- 50 ns delay time t d -- 10 ns rise time t r -- 40 ns turn--off time (v cc =--6.0vdc,i c = --150 madc, i b1 =i b2 =--15madc)(figure2) t off -- 110 ns storage time t s -- 80 ns fall time t f -- 30 ns 1. pulse test: pulse width 300 m s, duty cycle 2.0%. 2. f t is defined as the frequency at which |h fe | extrapolates to unity.
p2n2907a http://onsemi.com 3 0 0 -- 1 6 v 200 ns 50 1.0 k 200 -- 3 0 v to oscilloscope rise time 5.0 ns +15v --6.0v 1.0 k 37 50 1n916 1.0 k 200 ns -- 3 0 v to oscilloscope rise time 5.0 ns input z o =50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns input z o =50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns figure 1. delay and rise time test circuit figure 2. storage and fall time test circuit
p2n2907a http://onsemi.com 4 typical characteristics figure 3. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 3.0 0.2 -- 0 . 1 t j = 125 c 25 c -- 5 5 c v ce =--1.0v v ce =--10v h fe , normalized current gain 2.0 --0.2 --0.3 --0.5 --0.7 --1.0 --2.0 --3.0 --5.0 --7.0 --10 --20 --30 --50 --70 --100 --200 --300 --500 figure 4. collector saturation region i b , base current (ma) -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 0 -- 0 . 2 v , collector--emitter voltage (volts) 0 ce i c =--1.0ma --0.005 -- 1 0 m a --0.01 --100 ma --500 ma --0.02 --0.03 --0.05 --0.07 --0.1 --0.2 --0.3 --0.5 --0.7 --1.0 -- 2 . 0 -- 3 . 0 -- 5 . 0 -- 7 . 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 figure 5. turn--on time i c , collector current 300 -- 5 . 0 figure 6. turn--off time i c , collector current (ma) -- 5 . 0 t, time (ns) t, time (ns) 200 100 70 50 30 20 10 7.0 5.0 3.0 --7.0 --10 --20 --30 --50 --70 --100 --200 --300 --500 t r 2.0 v t d @v be(off) =0v v cc =--30v i c /i b =10 t j =25 c 500 300 100 70 50 30 20 10 7.0 5.0 --7.0 --10 --20 --30 --50 --70 --100 --200 --300 --500 200 t f t s =t s -- 1 / 8 t f v cc =--30v i c /i b =10 i b1 =i b2 t j =25 c
p2n2907a http://onsemi.com 5 typical small--signal characteristics noise figure v ce =10vdc,t a =25 c figure 7. frequency effects f, frequency (khz) 10 0.01 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) nf, noise figure (db) f=1.0khz i c =--50 m a --100 m a --500 m a -- 1 . 0 m a r s = optimum source resistance 8.0 6.0 4.0 2.0 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c =--1.0ma,r s = 430 --500 m a, r s = 560 -- 5 0 m a, r s =2.7k --100 m a, r s =1.6k figure 9. capacitances reverse voltage (volts) 30 figure 10. current--gain -- bandwidth product i c , collector current (ma) c, capacitance (pf) -- 0 . 1 2.0 figure 11. ?on? voltage i c , collector current (ma) -- 1 . 0 figure 12. temperature coefficients i c , collector current (ma) v, voltage (volts) t j =25 c v be(sat) @i c /i b =10 v ce(sat) @i c /i b =10 v be(on) @v ce =--10v r vc for v ce(sat) f t , current--gain ? bandwidth product (mhz) coefficient (mv/ c) 20 10 7.0 5.0 3.0 -- 0 . 2 -- 0 . 3 -- 0 . 5 -- 1 . 0 -- 2 . 0 -- 3 . 0 -- 5 . 0 -- 1 0 -- 2 0 -- 3 0 400 300 200 100 80 60 40 30 20 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 --1000 -- 0 . 8 -- 0 . 6 -- 0 . 4 -- 0 . 2 0 -- 0 . 1 -- 0 . 2 -- 0 . 5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 +0.5 0 -- 0 . 5 -- 1 . 0 -- 1 . 5 -- 2 . 0 -- 2 . 5 -- 0 . 1 -- 0 . 2 -- 0 . 5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 c eb c cb v ce =--20v t j =25 c r vb for v be
p2n2907a http://onsemi.com 6 package dimensions to--92 (to--226) case 29--11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x--x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0 . 5 0 0 -- -- -- 1 2 . 7 0 -- -- -- l 0 . 2 5 0 -- -- -- 6 . 3 5 -- -- -- n 0.080 0.105 2.04 2.66 p -- -- -- 0 . 1 0 0 -- -- -- 2 . 5 4 r 0.115 ------ 2.93 ------ v 0 . 1 3 5 -- -- -- 3 . 4 3 -- -- -- 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x--x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 ------ n 2.04 2.66 p 1.50 4.00 r 2 . 9 3 -- -- -- v 3 . 4 3 -- -- -- 1 t straight lead bulk pack bent lead tape & reel ammo pack style 17: pin 1. collector 2. base 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. sc illc makes no warranty, repres entation or guarantee r egarding the suitability of its produc ts for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specif ically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each cus tomer application by customer?s technical experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc pr oducts are not designed, intended, or autho rized for use as components in systems i ntended for surgical implant int o the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal inj ury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, em ployees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, an y claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the p art. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 p2n2907a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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